The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxialfilm growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
2
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.