In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
2
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
3
By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.