A plasma rotating electrode process (PREP) equipment, process parameters and powder forming mechanism were introduced.
介绍了等离子旋转电极工艺(PREP)制粉设备、主要工艺参数和粉末形成机理。
2
In this paper, concept of staggered generating ratio has been put forward, the forming process has been analysed, the calculate equation of the electrode dimension has been given.
文中提出了交错展成比的概念，分析了成形过程，给出了电极尺寸计算公式。
3
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.