Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effecttransistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
2
A voltage controlled linear resistor which consists of only two field-effecttransistors (FET) is presented.
本文提出了一种用两个场效应管实现的压控线性电阻电路。
3
High electron mobility transistors (HEMT) is one of fieldeffecttransistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.