The floatinggate can only be accessed though another transistor, the control gate.
浮动门虽然只能进入另一个晶体管,控制闸门。
2
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floatinggate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
3
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floatinggate charge storage transistor (11).