The invention also discloses a fabricating method for the nanocrystal floatinggatememory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方 法。
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In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floatinggate and the channel region.
The invention simultaneously discloses a production method of the nanocrystal floatinggate non-volatile memory with the double-layer tunneling dielectric structure.