With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FNtunneling.
随着器件尺寸的迅速减小,直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
2
Secondly, the transient characteristics of FNtunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次,本文分别研究了FN隧穿应力和热空穴(HH)应力导致的超薄栅氧化层漏电流瞬态特性。
3
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.