In recent years, there has been an extremely active study of amorphoussemiconductors.
近几年来，对非晶态半导体的研究极为活跃。
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This article discusses doping effects in amorphoussemiconductors, especially the properties at low temperatures, using the method of statistical physics.
本文应用统计物理的方法，讨论了非晶半导体的掺杂效应，特别是在低温下的特性。
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The hopping conduction in energy gap of amorphoussemiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.